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bdk: sdram: update all ram info comments

This commit is contained in:
CTCaer 2024-01-06 22:05:24 +02:00
parent eff27d92f2
commit 30c320d6e7

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@ -42,44 +42,52 @@
enum sdram_ids_erista
{
// LPDDR4 3200Mbps.
LPDDR4_ICOSA_4GB_SAMSUNG_K4F6E304HB_MGCH = 0,
LPDDR4_ICOSA_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 1,
LPDDR4_ICOSA_4GB_MICRON_MT53B512M32D2NP_062_WT = 2, // WT:C.
LPDDR4_ICOSA_4GB_SAMSUNG_K4F6E304HB_MGCH = 0, // Die-B. (2y-01).
LPDDR4_ICOSA_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 1, // Die-M. (2y-01).
LPDDR4_ICOSA_4GB_MICRON_MT53B512M32D2NP_062_WTC = 2, // Die-C. (2y-01).
LPDDR4_ICOSA_6GB_SAMSUNG_K4FHE3D4HM_MGCH = 4,
LPDDR4_ICOSA_6GB_SAMSUNG_K4FHE3D4HM_MGCH = 4, // Die-C. (2y-01).
LPDDR4_ICOSA_8GB_SAMSUNG_K4FBE3D4HM_MGXX = 7, // Custom 8GB. XX: CH/CJ/CL. 7 since it can be easily applied in fuses.
// Custom hekate/L4T supported 8GB. 7 dram id can be easily applied in fuses.
LPDDR4_ICOSA_8GB_SAMSUNG_K4FBE3D4HM_MGXX = 7, // XX: CH/CJ/CL.
};
enum sdram_ids_mariko
{
/*
* Nintendo Switch LPDRR4X generations:
* - 1x nm are 1st-gen
* - 1y nm are 2nd-gen
* - 1z/a nm are 3rd-gen
*/
// LPDDR4X 4266Mbps.
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 3, // Die-M. (1y-01).
LPDDR4X_AULA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 5, // Die-M. (1y-01).
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 6, // Die-M. (1y-01).
// LPDDR4X 3733Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M. (1x-03). 1st gen.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 9, // Die-M. (1x-03). 1st gen.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M. (1x-03).
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 9, // Die-M. (1x-03).
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 10, // Die-M. (1x-03).
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTE = 11, // Die-E. (1x-03). D9WGB. 4266Mbps.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M. (1x-03). 1st gen.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 13, // Die-M. (1x-03). 1st gen.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M. (1x-03).
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 13, // Die-M. (1x-03).
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 14, // Die-M. (1x-03).
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // Die-E. (1x-03). D9WGB. 4266Mbps.
// LPDDR4X 4266Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A. (1y-X03).
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03).
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03).
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 20, // Die-B. (1z-01). 3rd gen. 40% lower power usage.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 21, // Die-B. (1z-01). 3rd gen. 40% lower power usage.
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 22, // Die-B. (1z-01). 3rd gen. 40% lower power usage.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 20, // Die-B. (1z-01). 40% lp.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 21, // Die-B. (1z-01). 40% lp.
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 22, // Die-B. (1z-01). 40% lp.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03).
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03).
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // Die-F. (1y-01). D9XRR.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // Die-F. (1y-01). D9XRR.
@ -87,13 +95,13 @@ enum sdram_ids_mariko
LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_IOWA_4GB_HYNIX_H54G46CYRBX267 = 29, // Die-C. (1a-01). 61% lower power usage.
LPDDR4X_HOAG_4GB_HYNIX_H54G46CYRBX267 = 30, // Die-C. (1a-01). 61% lower power usage.
LPDDR4X_AULA_4GB_HYNIX_H54G46CYRBX267 = 31, // Die-C. (1a-01). 61% lower power usage.
LPDDR4X_IOWA_4GB_HYNIX_H54G46CYRBX267 = 29, // Die-C. (1a-01). 61% lp.
LPDDR4X_HOAG_4GB_HYNIX_H54G46CYRBX267 = 30, // Die-C. (1a-01). 61% lp.
LPDDR4X_AULA_4GB_HYNIX_H54G46CYRBX267 = 31, // Die-C. (1a-01). 61% lp.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // Die-B. (1a-01). 61% lower power usage.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // Die-B. (1a-01). 61% lower power usage.
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // Die-B. (1a-01). 61% lower power usage.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // Die-B. (1a-01). 61% lp.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // Die-B. (1a-01). 61% lp.
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // Die-B. (1a-01). 61% lp.
};
enum sdram_codes_mariko