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bdk: sdram: rename new dram chips

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CTCaer 2022-12-19 05:25:26 +02:00
parent 4d823d5909
commit 560f077196
3 changed files with 39 additions and 33 deletions
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14
bdk/mem/sdram.c
View file

@ -76,12 +76,12 @@ static const u8 dram_encoding_t210b01[] = {
/* 26 */ LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF,
/* 27 */ LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF,
/* 28 */ LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL,
/* 29 */ LPDDR4X_4GB_NEW0,
/* 30 */ LPDDR4X_4GB_NEW0,
/* 31 */ LPDDR4X_4GB_NEW0,
/* 32 */ LPDDR4X_4GB_NEW1,
/* 33 */ LPDDR4X_4GB_NEW1,
/* 34 */ LPDDR4X_4GB_NEW1,
/* 29 */ LPDDR4X_4GB_HYNIX_1A,
/* 30 */ LPDDR4X_4GB_HYNIX_1A,
/* 31 */ LPDDR4X_4GB_HYNIX_1A,
/* 32 */ LPDDR4X_4GB_MICRON_1A,
/* 33 */ LPDDR4X_4GB_MICRON_1A,
/* 34 */ LPDDR4X_4GB_MICRON_1A,
};
#include "sdram_config.inl"
@ -1482,7 +1482,7 @@ static void _sdram_init_t210()
const sdram_params_t210_t *params = (const sdram_params_t210_t *)_sdram_get_params_t210();
// Set DRAM voltage.
max7762x_regulator_set_voltage(REGULATOR_SD1, 1100000); // HOS uses 1.125V
max7762x_regulator_set_voltage(REGULATOR_SD1, 1125000); // HOS: 1.125V. Normal: 1.1V.
// VDDP Select.
PMC(APBDEV_PMC_VDDP_SEL) = params->pmc_vddp_sel;

22
bdk/mem/sdram.h
View file

@ -78,9 +78,9 @@ enum sdram_ids_mariko
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03).
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03).
LPDDR4X_IOWA_4GB_SAMSUNG_1Z = 20, // 1z nm. 40% lower power usage. (1z-B01).
LPDDR4X_HOAG_4GB_SAMSUNG_1Z = 21, // 1z nm. 40% lower power usage. (1z-B01).
LPDDR4X_AULA_4GB_SAMSUNG_1Z = 22, // 1z nm. 40% lower power usage. (1z-B01).
LPDDR4X_IOWA_4GB_SAMSUNG_1Z = 20, // 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_HOAG_4GB_SAMSUNG_1Z = 21, // 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_AULA_4GB_SAMSUNG_1Z = 22, // 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03).
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03).
@ -91,13 +91,13 @@ enum sdram_ids_mariko
LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A.
LPDDR4X_UNK0_4GB_NEW0 = 29,
LPDDR4X_UNK1_4GB_NEW0 = 30,
LPDDR4X_UNK2_4GB_NEW0 = 31,
LPDDR4X_UNK0_4GB_HYNIX_1A = 29, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_HYNIX_1A = 30, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_HYNIX_1A = 31, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK0_4GB_NEW1 = 32,
LPDDR4X_UNK1_4GB_NEW1 = 33,
LPDDR4X_UNK2_4GB_NEW1 = 34,
LPDDR4X_UNK0_4GB_MICRON_1A = 32, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_MICRON_1A = 33, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_MICRON_1A = 34, // 1a nm. 61% lower power usage. (1a-01).
};
enum sdram_codes_mariko
@ -116,8 +116,8 @@ enum sdram_codes_mariko
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 6, // DRAM IDs: 25, 26, 27.
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 7, // DRAM IDs: 03, 05, 06.
LPDDR4X_4GB_NEW0 = 8, // DRAM IDs: 29, 30, 31.
LPDDR4X_4GB_NEW1 = 9, // DRAM IDs: 32, 33, 34.
LPDDR4X_4GB_HYNIX_1A = 8, // DRAM IDs: 29, 30, 31.
LPDDR4X_4GB_MICRON_1A = 9, // DRAM IDs: 32, 33, 34.
};
void sdram_init();

36
bdk/mem/sdram_config_t210b01.inl
View file

@ -602,6 +602,7 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
.mc_video_protect_gpu_override0 = 0x00000000,
.mc_video_protect_gpu_override1 = 0x00000000,
.mc_sec_carveout_bom = 0xFFF00000,
.mc_sec_carveout_adr_hi = 0x00000000,
.mc_sec_carveout_size_mb = 0x00000000,
@ -705,6 +706,7 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
.bct_na = 0x00000000,
};
#define DRAM_CC_LPDDR4X_PMACRO_IB (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ))
#define DRAM_CC_LPDDR4X_AUTOCAL_VPR (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) | \
DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE) | \
@ -712,14 +714,16 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL) | \
DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
DRAM_CC(LPDDR4X_4GB_NEW0) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_1A) | \
DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_1Z))
#define DRAM_CC_LPDDR4X_DYN_SELF_CTRL (DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL) | \
DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
DRAM_CC(LPDDR4X_4GB_NEW0) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_1A) | \
DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_1Z))
#define DRAM_CC_LPDDR4X_QUSE_EINPUT (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) | \
@ -727,16 +731,18 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL) | \
DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
DRAM_CC(LPDDR4X_4GB_NEW0) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_1A) | \
DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_1Z))
#define DRAM_CC_LPDDR4X_FAW (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL) | \
DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
DRAM_CC(LPDDR4X_4GB_NEW1))
DRAM_CC(LPDDR4X_4GB_MICRON_1A))
#define DRAM_CC_LPDDR4X_VPR (DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
DRAM_CC(LPDDR4X_4GB_NEW0) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_1A) | \
DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_1Z))
#define DRAM_CC_LPDDR4X_SAMSUNG_8GB (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) | \
@ -745,16 +751,16 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
// Samsung LPDDR4X 8GB K4UBE3D4AM-MGCJ Die-M for SDEV Iowa and Hoag.
{ 0x35353535, 0x350 / 4, DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) }, // emc_pmacro_ib_vref_dq_0.
{ 0x35353535, 0x354 / 4, DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) }, // emc_pmacro_ib_vref_dq_1.
{ 0x00100010, 0x3FC / 4, DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) }, // emc_pmacro_ib_ddll_long_dqs_rank0_0.
{ 0x00100010, 0x400 / 4, DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) }, // emc_pmacro_ib_ddll_long_dqs_rank0_1.
{ 0x00100010, 0x404 / 4, DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) }, // emc_pmacro_ib_ddll_long_dqs_rank0_2.
{ 0x00100010, 0x408 / 4, DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) }, // emc_pmacro_ib_ddll_long_dqs_rank0_3.
{ 0x00100010, 0x40C / 4, DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) }, // emc_pmacro_ib_ddll_long_dqs_rank1_0.
{ 0x00100010, 0x410 / 4, DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) }, // emc_pmacro_ib_ddll_long_dqs_rank1_1.
{ 0x00100010, 0x414 / 4, DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) }, // emc_pmacro_ib_ddll_long_dqs_rank1_2.
{ 0x00100010, 0x418 / 4, DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) }, // emc_pmacro_ib_ddll_long_dqs_rank1_3.
{ 0x35353535, 0x350 / 4, DRAM_CC_LPDDR4X_PMACRO_IB }, // emc_pmacro_ib_vref_dq_0.
{ 0x35353535, 0x354 / 4, DRAM_CC_LPDDR4X_PMACRO_IB }, // emc_pmacro_ib_vref_dq_1.
{ 0x00100010, 0x3FC / 4, DRAM_CC_LPDDR4X_PMACRO_IB }, // emc_pmacro_ib_ddll_long_dqs_rank0_0.
{ 0x00100010, 0x400 / 4, DRAM_CC_LPDDR4X_PMACRO_IB }, // emc_pmacro_ib_ddll_long_dqs_rank0_1.
{ 0x00100010, 0x404 / 4, DRAM_CC_LPDDR4X_PMACRO_IB }, // emc_pmacro_ib_ddll_long_dqs_rank0_2.
{ 0x00100010, 0x408 / 4, DRAM_CC_LPDDR4X_PMACRO_IB }, // emc_pmacro_ib_ddll_long_dqs_rank0_3.
{ 0x00100010, 0x40C / 4, DRAM_CC_LPDDR4X_PMACRO_IB }, // emc_pmacro_ib_ddll_long_dqs_rank1_0.
{ 0x00100010, 0x410 / 4, DRAM_CC_LPDDR4X_PMACRO_IB }, // emc_pmacro_ib_ddll_long_dqs_rank1_1.
{ 0x00100010, 0x414 / 4, DRAM_CC_LPDDR4X_PMACRO_IB }, // emc_pmacro_ib_ddll_long_dqs_rank1_2.
{ 0x00100010, 0x418 / 4, DRAM_CC_LPDDR4X_PMACRO_IB }, // emc_pmacro_ib_ddll_long_dqs_rank1_3.
/*! Shared patched between DRAM Codes. */
{ 0x05500000, 0x0D4 / 4, DRAM_CC_LPDDR4X_AUTOCAL_VPR }, // emc_auto_cal_config2.