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bdk: sdram: name 1a micron ram chips
Again, as with 3rd gen samsung and hynix, that's an educated guess.
This commit is contained in:
parent
fdf0dcc636
commit
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3 changed files with 13 additions and 13 deletions
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@ -79,9 +79,9 @@ static const u8 dram_encoding_t210b01[] = {
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/* 29 */ LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI,
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/* 29 */ LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI,
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/* 30 */ LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI,
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/* 30 */ LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI,
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/* 31 */ LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI,
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/* 31 */ LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI,
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/* 32 */ LPDDR4X_4GB_MICRON_1A,
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/* 32 */ LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB,
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/* 33 */ LPDDR4X_4GB_MICRON_1A,
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/* 33 */ LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB,
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/* 34 */ LPDDR4X_4GB_MICRON_1A,
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/* 34 */ LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB,
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};
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};
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#include "sdram_config.inl"
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#include "sdram_config.inl"
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@ -91,9 +91,9 @@ enum sdram_ids_mariko
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LPDDR4X_UNK1_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 30, // Die-M. 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK1_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 30, // Die-M. 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK2_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 31, // Die-M. 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK2_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 31, // Die-M. 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK0_4GB_MICRON_1A = 32, // 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK0_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK1_4GB_MICRON_1A = 33, // 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK1_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK2_4GB_MICRON_1A = 34, // 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK2_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // 1a nm. 61% lower power usage. (1a-01).
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};
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};
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enum sdram_codes_mariko
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enum sdram_codes_mariko
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@ -112,7 +112,7 @@ enum sdram_codes_mariko
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LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 6, // DRAM IDs: 25, 26, 27.
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LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 6, // DRAM IDs: 25, 26, 27.
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LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 7, // DRAM IDs: 03, 05, 06.
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LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 7, // DRAM IDs: 03, 05, 06.
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LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 8, // DRAM IDs: 29, 30, 31.
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LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 8, // DRAM IDs: 29, 30, 31.
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LPDDR4X_4GB_MICRON_1A = 9, // DRAM IDs: 32, 33, 34.
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LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB = 9, // DRAM IDs: 32, 33, 34.
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};
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};
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void sdram_init();
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void sdram_init();
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@ -1,5 +1,5 @@
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/*
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/*
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* Copyright (c) 2020-2022 CTCaer
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* Copyright (c) 2020-2023 CTCaer
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*
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*
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* This program is free software; you can redistribute it and/or modify it
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* This program is free software; you can redistribute it and/or modify it
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* under the terms and conditions of the GNU General Public License,
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* under the terms and conditions of the GNU General Public License,
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@ -715,7 +715,7 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB) | \
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DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
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DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
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#define DRAM_CC_LPDDR4X_DYN_SELF_CTRL (DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE) | \
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#define DRAM_CC_LPDDR4X_DYN_SELF_CTRL (DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE) | \
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@ -723,7 +723,7 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB) | \
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DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
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DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
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#define DRAM_CC_LPDDR4X_QUSE_EINPUT (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) | \
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#define DRAM_CC_LPDDR4X_QUSE_EINPUT (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) | \
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@ -732,17 +732,17 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB) | \
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DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
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DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
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#define DRAM_CC_LPDDR4X_FAW (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL) | \
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#define DRAM_CC_LPDDR4X_FAW (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_1A))
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB))
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#define DRAM_CC_LPDDR4X_VPR (DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
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#define DRAM_CC_LPDDR4X_VPR (DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
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DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
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DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB) | \
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DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
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DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
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#define DRAM_CC_LPDDR4X_8GB (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) | \
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#define DRAM_CC_LPDDR4X_8GB (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) | \
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